SIRS700DP-T1-RE3
Description
N-CHANNEL 100 V (D-S) MOSFET POW
Detailed Description
N-Channel 100 V 30A (Ta), 127A (Tc) 7.4W (Ta),132W (Tc) Surface Mount PowerPAK® SO-8
Delivery Cycle
No lead time information available
Product Attributes
Drain to Source Voltage (Vdss)
100 V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 127A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Mounting Type
Surface Mount
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 50 V
Packaging
Tape & Reel (TR)
Power Dissipation (Max)
7.4W (Ta),132W (Tc)
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Documents & Media
Datasheets：SIRS700DP
HTML Datasheet：SIRS700DP