SIHG065N60E-GE3
Description
MOSFET N-CH 600V 40A TO247AC
Detailed Description
N-Channel 600 V 40A (Tc) 250W (Tc) Through Hole TO-247AC
Delivery Cycle
21 week(s)
Product Attributes
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 100 V
Power Dissipation (Max)
250W (Tc)
FET Type
N-Channel
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
600 V
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Packaging
Tube
Rds On (Max) @ Id, Vgs
65mOhm @ 16A, 10V
Mounting Type
Through Hole
FET Feature
-
Supplier Device Package
TO-247AC
Documents & Media
Datasheets：SIHG065N60E
Featured Product：MOSFETs in 5G
PCN Assembly/Origin：Mosfet Mfg Add 28/Sep/2020
PCN Packaging：Packing Tube Design 19/Sep/2019