JANTXV2N3960
Description
TRANS NPN 12V TO18
Detailed Description
Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)
Delivery Cycle
No lead time information available
Product Attributes
Packaging
Bulk
Voltage - Collector Emitter Breakdown (Max)
12 V
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 1V
Current - Collector Cutoff (Max)
10µA (ICBO)
Transistor Type
NPN
Notification
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Power - Max
400 mW
Mounting Type
Through Hole
Frequency - Transition
-
Vce Saturation (Max) @ Ib, Ic
300mV @ 3mA, 30mA
Operating Temperature
-65°C ~ 200°C (TJ)
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18 (TO-206AA)
Documents & Media
Environmental Information：Microchip RoHS
Environmental Information：Microchip REACH
Datasheets：2N3960
Environmental Information：Microchip CA Prop65